features r ds(on) = 0.016 ohm i d = 65a bv dss = 60v { { { ? { { { ? 2. drain 3. source 1. gate ? FQP65N06 pb free plating product FQP65N06 pb 65a,60v heatsink planar n-channel power mosfet general description this n-channel enhancement mode field-effect power transistor using thinki semiconductor advan ced planar stripe, dmos technol- ogy intended for off-line switch mode power supply. also, especially designed to minimize rds(on) and high rugged avalanche characteristics. the to-220m pkg is well suited for adaptor power unit and small power inverter application. ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/6 rev.05 to-220m 1 2 3 ? 65a, 60v, r ds(on) = 0.016 ? @v gs = 10 v ? low gate charge ( typical 48 nc) ? low crss ( typical 100 pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? 175 c maximum junction temperature rating absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics v dss drain-source voltage 60 v i d drain current - continuous (t c = 25c) 65 a - continuous (t c = 100c) 46.1 a i dm drain current - pulsed (note 1) 260 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 650 mj i ar avalanche current (note 1) 65 a e ar repetitive avalanche energy (note 1) 15.0 mj dv/dt peak diode recovery dv/dt (note 3) 7.0 v/ns p d power dissipation (t c = 25c) 150 w - derate above 25c 1.00 w/c t j , t stg operating and storage temperature range -55 to +175 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case -- 1.00 c / w r cs thermal resistance, case-to-sink 0.5 -- c / w r ja thermal resistance, junction-to-ambient -- 62.5 c / w symbol parameter FQP65N06 units
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/6 rev.05 electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 180 h, i as = 65a, v dd = 25v, r g = 25 ?, starting t j = 25c 3. i sd 65a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 60 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.07 -- v/c i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 a v ds = 48 v, t c = 150c -- -- 10 a i gssf gate-body leakage current, forward v gs = 25 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -25 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d =32.5 a -- 0.012 0.016 ? g fs forward transconductance v ds = 25 v, i d = 32.5 a -- 48 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 1850 2410 pf c oss output capacitance -- 700 910 pf c rss reverse transfer capacitance -- 100 130 pf switching characteristics t d(on) turn-on delay time v dd = 30 v, i d = 32.5 a, r g = 25 ? -- 20 50 ns t r turn-on rise time -- 160 330 ns t d(off) turn-off delay time -- 90 190 ns t f turn-off fall time -- 105 220 ns q g total gate charge v ds = 48 v, i d = 65 a, v gs = 10 v -- 48 65 nc q gs gate-source charge -- 12 -- nc q gd gate-drain charge -- 19.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 65 a i sm maximum pulsed drain-source diode forward current -- -- 260 a v sd drain-source diode forward voltage v gs = 0 v, i s = 65 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 65 a, di f / dt = 100 a/ s -- 62 -- ns q rr reverse recovery charge -- 110 -- nc (note 4) (note 4, 5) (note 4, 5) (note 4) ? FQP65N06
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 3/6 rev.05 0 1020304050 0 2 4 6 8 10 12 v ds = 30v v ds = 48v not e : i d = 65a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 0 10 1 10 2 175 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 50 100 150 200 250 300 0 5 10 15 20 25 30 v gs = 20v v gs = 10v not e : t j = 25 r ds(on) [m ], drain-source on-resistance i d , drain current [a] 246810 10 0 10 1 10 2 175 25 -55 notes : 1. v ds = 25v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics ? FQP65N06
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 4/6 rev.05 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : 1 . z jc (t) = 1.00 /w m a x. 2 . d u t y fa c t o r , d = t 1 /t 2 3 . t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), therm al response t 1 , s q u a re w a v e p u ls e d u ra tio n [s e c ] 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 i d , drain current [a] t c , case temperature [ ] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 dc 10 ms 1 ms 100 s operat ion in this area is limited by r ds(on) not es : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 notes : 1. v gs = 10 v 2. i d = 32.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 ? FQP65N06
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 5/6 rev.05 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p ? FQP65N06
? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 6/6 rev.05 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ? FQP65N06
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